| PART |
Description |
Maker |
| GI821 GI828 GI820 GI826 GI822 GI824 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 820uF; Voltage: 63V; Case Size: 16x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 680uF; Voltage: 63V; Case Size: 16x31.5 mm; Packaging: Bulk
Fast Switching Plastic Rectifier(快速转换塑胶整流器)
|
GE Security, Inc.
GE[General Semiconductor]
|
| GI811 GI812 GI816 GI818 GI810 GI814 GI817 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 560uF; Voltage: 63V; Case Size: 12.5x40 mm; Packaging: Bulk
Glass Passivated Junction Fast Switching Rectifier(钝化玻璃结型快速转换整流器)
|
GE Security, Inc.
GE[General Semiconductor]
|
| GI250-2 GI250-4 GI250-1 GI250-3 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 820uF; Voltage: 50V; Case Size: 12.5x40 mm; Packaging: Bulk
HIGH VOLTAGE GLASS PASSIVATED JUNCTION RECTIFIER
|
GOOD-ARK Electronics
|
| SBL82314G SBL82314N SBL82314Z SBL81314Z SBL81314N |
Low Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving
Low Power BIDI Optical Standard Module 1550 nm Emitting 1310 nm Receiving
Low Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving
|
INFINEON[Infineon Technologies AG]
http://
|
| SBL51414G SBL52414Z SBL51414N SBL51414Z SBL52414G |
Low Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 低功率比迪光学标准模310纳米发光550纳米接收
|
INFINEON[Infineon Technologies AG]
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| SBL52214Z SBL52214G SBL52214N |
Low Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving 低功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| SBH52414N-FSAN SBH52414Z-FSAN SBH52414G-FSAN SBH52 |
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 高功率比迪光学标准模310纳米发光550纳米接收
2 GANG DEEP DEVICE BOX SCA-294
Components and FTTx solutions - Tx 1310nm/Rx 1550nm
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
|
INFINEON[Infineon Technologies AG]
|
| STF5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STP12N50M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
